carrier lifetime การใช้

• These dangling bonds act as recombination centers that severely reduce carrier lifetime.
• The bulk charge carrier lifetime in float-zone silicon is the highest among various manufacturing processes.
• They also showed that carrier lifetimes in the mixed perovskite are longer than in the pure iodide.
• Finally, this process raises the carrier diffusion length, resulting in the increase of carrier lifetime.
• In indirect band gap semiconductors, the carrier lifetime strongly depends on the concentration of recombination centers.
• This time is given by the carrier lifetime, and is the primary limit on high frequency operation.
• Without the plasma, the device is subjected to less structural damage and obtains higher effective carrier lifetimes.
• To enhance diffusion length ( or carrier lifetime ), a variety of organic materials are attached to the titania.
• This technique is useful for measuring the minority carrier lifetime of III-V semiconductors like gallium arsenide ( GaAs ).
• This necessitates usage of materials with strong absorption coefficients ? ( ? ), high minority carrier lifetimes ? minority, and high mobilities ?
• Pulses produced by this method have average power levels on the order of several tens of Fourier spectrum is determined by the carrier lifetime of the semiconductor.
• This also imply cheaper cost of devices as less processing steps are required during the manufacturing stages where the need of carrier lifetime control techniques are reduced.
• A definition in semiconductor physics, "'carrier lifetime "'is defined as the average time it takes for a minority carrier to recombine.
• Float-zone carrier lifetimes are around 1000 microseconds compared to 20-200 microseconds with Czochralski process, and 1 30 microseconds with cast multi-crystalline silicon.
• This information is used throughout the semiconductor production chain, and begins with evaluating epitaxially grown crystals, including parameters such as average doping concentration, doping profiles, and carrier lifetimes.
• Specifically, high-density QD structures with long carrier lifetimes need to be developed and new materials need to be found to eliminate the need to use donor carriers to fill the IB.
• While QCLs typically require input electrical powers of nearly 1 W and higher to operate at room temperature, ICLs are able to lase for input powers as low as 29 mW owing to the much longer interband carrier lifetime.
• Where \ tau _ \ mathrm { eff } is the effective carrier lifetime, \ tau _ \ mathrm { bulk } is the bulk carrier lifetime, s is the surface recombination velocity and d is the film or wafer thickness.
• Where \ tau _ \ mathrm { eff } is the effective carrier lifetime, \ tau _ \ mathrm { bulk } is the bulk carrier lifetime, s is the surface recombination velocity and d is the film or wafer thickness.
• Different techniques, such as carrier lifetime control, injection efficiency and buffer layer devices, have been used to minimize turn-OFF switching transient, but all result in a trade-off between the ON-state loss and switching speed.